Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes

M. Fryda; Th. Mathée; John Oshinowo; D.H. Baek; H. J. Förster; G. Heinze

doi:10.4028/www.scientific.net/SSP.219.40

Paper Titles

Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching
p.24

Aluminum Reduction in SC1
p.28

Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals
p.32

Impact of Surface Treatment of Si₃N₄ on Subsequent SiO₂ Deposition
p.36

Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes
p.40

InGaAs (110) Surface Cleaning Using Atomic Hydrogen
p.47

Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid
p.52

Nanoscale Etching and Reoxidation of InAs
p.56

Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers
p.59

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Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes

Abstract:

The definition of sub-20 nm electronic devices for the newest generation of smart phones, computer and automotive is calling for very innovative FEOL wet chemical cleans. The electronic properties are very sensitive, in respect of the surface morphology on a Si-wafer. Most of the modern wet cleans are based on the RCA-clean [1]. Innovative cleans, like for example the IMEC-clean [2] and modified RCA clean were developed, using ozone-DIW mixture (O₃-DIW), in order to improve the cleaning performance [3], [4]. Since several years electrolyzed water (EW) is used in semiconductor manufacturing [5]. An electrochemical reaction is induced by an electrode and a small amount of ammonia hydroxide (NH₄OH) or ammonia sulfate and DIW [7].

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Periodical:

Solid State Phenomena (Volume 219)

Pages:

40-43

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.40

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Online since:

September 2014

Authors:

M. Fryda, Th. Mathée, John Oshinowo*, D.H. Baek, H. J. Förster, G. Heinze

Keywords:

Anode Water, Boron Doped Diamond Cells, Cathode Water, Electrolyzed Water, ESA, Hydrogenated Water, Ozonized Water, pH-Value, Redox Potential, SC1, SC2, SPM

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References

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