Simultaneous Localization of Electrons in Different Δ-Valleys in Ge/Si Quantum Dot Structures

Aigul Zinovieva; Natalia Stepina; Anatoliy Vasilevich Dvurechenskii; Leonid Kulik; Gregor Mussler; Juergen Moers; Detlev Grützmacher

doi:10.4028/www.scientific.net/SSP.233-234.415

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HomeSolid State PhenomenaSolid State Phenomena Vols. 233-234Simultaneous Localization of Electrons in...

Simultaneous Localization of Electrons in Different Δ-Valleys in Ge/Si Quantum Dot Structures

Abstract:

In the present work the possibility of simultaneous localization of two electrons in Δ¹⁰⁰ and Δ⁰⁰¹ valleys in ordered structures with Ge/Si quantum dots (QD) was verified experimentally by electron spin resonance (ESR) method. ESR spectra obtained for the ordered ten-layered QD structure in the dark shows the signal corresponding to electron localization in Si at the Ge QD base edges, in Δ¹⁰⁰, Δ⁰¹⁰ valleys (g_zz=1.9985, g_in-plane=1.999). Light illumination causes the appearance of a new ESR line (g_zz=1.999) attributed to the electrons in Δ⁰⁰¹ valley localized at the QD apexes. Observed effect is explained by enhancement of electron confienment near QD apex by Coloumb attraction to the photogenerated hole trapped in Ge QD.

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Periodical:

Solid State Phenomena (Volumes 233-234)

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415-418

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.233-234.415

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Online since:

July 2015

Authors:

Aigul Zinovieva*, Natalia Stepina, Anatoliy Vasilevich Dvurechenskii, Leonid Kulik, Gregor Mussler, Juergen Moers, Detlev Grützmacher

Keywords:

Electron Spin Resonance, g-Factor, Line Width, Localization, Quantum Dot

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