Structural, Magnetic and Electric Transport Properties for Co2FeAl0.5Si0.5/n-GaAs Junctions

Nobuki Tezuka; Tatsuya Saito; Masashi Matsuura; Satoshi Sugimoto

doi:10.4028/www.scientific.net/SSP.233-234.411

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HomeSolid State PhenomenaSolid State Phenomena Vols. 233-234Structural, Magnetic and Electric Transport...

Structural, Magnetic and Electric Transport Properties for Co₂FeAl_0.5Si_0.5/n-GaAs Junctions

Abstract:

The authors have been investigated structural, magnetic and electrical transport properties for CFAS/n-GaAs junctions. From cross sectional TEM image, RHEED and XRD patternz of thin CFAS films, CFAS films found to be grown epitaxially on GaAs, and shown L2₁-ordered structure for the films with substrate temperature (T_CFAS) of 300°C and 400°C. It is hard to find some additional phase around the interface between CFAS and GaAs. Magnetic moment (and magnetic anisotropy energy) of CFAS increased (and decreased) with increasing T_CFAS up to 300°C and decreased (and increased) at T_CFAS of 400°C, respectively. The asymmetry of current (J)-voltage (V) curve for the junction with T_CFAS =300°C was found to be larger than those for other junctions. It was found there is the relation between T_CFAS dependence of spin signal obtained by three terminal Hanle or four terminal non-local measurement and that of magnetic moment, magnetic anisotropy field or asymmetry of J-V curve.

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Periodical:

Solid State Phenomena (Volumes 233-234)

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411-414

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https://doi.org/10.4028/www.scientific.net/SSP.233-234.411

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Online since:

July 2015

Authors:

Nobuki Tezuka*, Tatsuya Saito, Masashi Matsuura, Satoshi Sugimoto

Keywords:

GaAs, Heusler Alloy, Spin Injection

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