Magnetic and Magnetoresistance Properties of (Co/Ge)n Films

Gennady Patrin; Igor Turpanov; Ekaterina Maruschenko; Konstantin Patrin; Alexander Kobyakov; Vadim Maltsev; Vasily Yushkov

doi:10.4028/www.scientific.net/SSP.233-234.423

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HomeSolid State PhenomenaSolid State Phenomena Vols. 233-234Magnetic and Magnetoresistance Properties of...

Magnetic and Magnetoresistance Properties of (Co/Ge)_n Films

Abstract:

The magnetic and electrical properties of (Co/Ge)_nfilms are experimentally studied. It is established that at the Co/Ge interfacean intermediate magnetic layer forms. Twophases of cobalt, one is a face-centered cubic phase and the other ispresumably a Co–Ge alloy with a weakly ferromagnetic order, have been found toexist. A “dead” layer no more than 2 nm in thickness is formed at the interface.This layer affects the magnetic behavior andmagnetoresistive effect in the investigated structures.

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Periodical:

Solid State Phenomena (Volumes 233-234)

Pages:

423-426

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.233-234.423

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Online since:

July 2015

Authors:

Gennady Patrin*, Igor Turpanov, Ekaterina Maruschenko, Konstantin Patrin, Alexander Kobyakov, Vadim Maltsev, Vasily Yushkov

Keywords:

Bilayer Structure Magnetization, Cobalt, Coercivity, Ferromagnetic Metal/Semiconductor Films, Germanium Interface, Magnetoresistance, Schottky Barrier

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