A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning

Dae Wan Ko; Tae Ho Hwang; Sok Hyung Han; Chang Hyun Kim; Byung Sul Ryu

doi:10.4028/www.scientific.net/SSP.255.182

Paper Titles

Measurement of the Frictional Force between PVA Roller Brushes and Semiconductor Wafers with Various Films Immersed in Chemicals
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Removal of Bull’s Eye Signature by Optimizing Wet Cleans Recipe
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Toward CO₂ Beam Cleaning of 20-nm Particles in Atmospheric Pressure
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Liquid Cell Platform to Directly Visualize Bottom-Up Assembly and Top-Down Etch Processes inside TEM
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A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning
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Post-CMP Cleaners for Tungsten at Advanced Nodes
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Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance
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Developments for Physical Cleaning Sample with High Adhesion Force Particles and Direct Measurement of its Removal Force
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Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool
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HomeSolid State PhenomenaSolid State Phenomena Vol. 255A Study on the Electrostatic Discharge (ESD)...

A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning

Abstract:

The application of the SOH Mask created a new defect. Defect image is similar to ESD defect, which occurred on POLY and METAL film. Stringent experiments were conducted in order to prove the correspondence principle of the defect of SOH and the mechanism of the ESD defect. Finally, it’s concluded the defect of SOH is equal to the ESD defect. ESD defect occurred also on SOH film, like POLY or METAL film.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

182-185

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.182

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Online since:

September 2016

Authors:

Dae Wan Ko*, Tae Ho Hwang, Sok Hyung Han, Chang Hyun Kim, Byung Sul Ryu

Keywords:

Electrostatic Discharge, ESD, Rebounding, Semiconductor, SOH Film, SOH Mask Pattern, Strip

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DOI: 10.4028/www.scientific.net/ssp.145-146.185

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