Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool

Xi Chen; Petrie Yam; Manish Keswani; Nagaya Okada; Claudio I. Zanelli

doi:10.4028/www.scientific.net/SSP.255.207

Paper Titles

A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning
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Post-CMP Cleaners for Tungsten at Advanced Nodes
p.186

Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance
p.195

Developments for Physical Cleaning Sample with High Adhesion Force Particles and Direct Measurement of its Removal Force
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Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool
p.207

Molecular Simulation Contribution to Porous Low-k Pore Size Determination after Damage by Etch and Wet Clean Processes - Invited Paper
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Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment
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Characterization of Etch Residues Generated on Damascene Structures
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Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects
p.232

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Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool

Abstract:

A novel transducer for megasonic cleaning of photomasks presents an approach that differs from previous configurations, and appears to have unique features for cleaning while minimizing damage. As the cleaning and damage processes are determined by the presence of cavitation, a thorough acoustic analysis was performed on the device, by using a calibrated hydrophone scanned at the photomask location, and a quartz photomask with embedded sensors.