Characterization of Etch Residues Generated on Damascene Structures

Quoc Toan Le; Els Kesters; I. Hoflijk; T. Conard; M. Shen; S. Braun; Y. Burk; Frank Holsteyns

doi:10.4028/www.scientific.net/SSP.255.227

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Characterization of Etch Residues Generated on Damascene Structures
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HomeSolid State PhenomenaSolid State Phenomena Vol. 255Characterization of Etch Residues Generated on...

Characterization of Etch Residues Generated on Damascene Structures

Abstract:

For patterned TiN/silicon oxide/low-k dielectric stack, fluorinated etch residues were detected on the TiN surface, the dielectric sidewall and bottom, regardless of the low-k material used in the stack. XPS results showed that they consisted of polymer-based (CFx) residues deposited on trench sidewall and bottom, and metal-based (TiFx) residues mainly deposited on top surface. In terms of post-etch residue removal, the efficiency of various wet clean solutions can be clearly distinguished for CFx, and TiFx using the same patterned porous low-k stack. These results also demonstrate that the removal of both TiFx and CFx residues generated during the plasma is possible in one step with optimized chemical and process.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

227-231

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.227

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Online since:

September 2016

Authors:

Quoc Toan Le*, Els Kesters, I. Hoflijk, T. Conard, M. Shen, S. Braun, Y. Burk, Frank Holsteyns

Keywords:

Angle-Resolved XPS, Interconnects, Low-k Dielectrics, Post-Etch Residue

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