Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal

Alexander Kabansky; Glenn Westwood; Samantha Tan; Frederic Kovacs; David Lou; Joe Han; Gerardo Delgadino; H.W. Chang

doi:10.4028/www.scientific.net/SSP.255.237

Paper Titles

Molecular Simulation Contribution to Porous Low-k Pore Size Determination after Damage by Etch and Wet Clean Processes - Invited Paper
p.215

Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment
p.223

Characterization of Etch Residues Generated on Damascene Structures
p.227

Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects
p.232

Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal
p.237

TiN Metal Hardmask Etch Residues Removal with AlN Etch
p.242

High Throughput Wet Etch Solution for BEOL TiN Removal
p.245

Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch
p.251

The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
p.255

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Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal

Abstract:

For advanced technology nodes TiN hard mask integration into Cu/low-k via/trench DD process requires the mask to be fully stripped after DD etching. The one-step H₂O₂ containing wet chemical clean aiming to removing TiN mask often failed to simultaneously clean etch residue. We developed more reliable two-step wet chemical process combining a solvent-based post-etch residue clean followed by a solvent/H₂O₂ mixture strip for TiN mask removal. Bath lifetime optimization was also demonstrated.