Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch

Abstract:

Using diluted HF (0.05-0.1%) as cleaning solutions, experimental results showed that the etching behavior of Cu strongly depended on the dissolved oxygen (DO) concentration and the chamber atmosphere conditions. On the contrary, the Cu etch rate was not affected by the HF concentration. A complete reverse trend was observed for plasma-treated OSG2.4. The etching behavior of plasma-treated OSG2.4 was not affected by DO concentration and chamber atmosphere conditions, but was strongly dependent on the HF concentration. The etch rate determined on patterned structure with low-k exposed, using CD measurements, confirmed the results obtained on blanket plasma-treated OSG2.4 material.

• Periodical: Solid State Phenomena (Volume 255)
• Pages: 251-254
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.255.251
• Online since: September 2016
• Authors: Els Kesters*, Akihisa Iwasaki, Quoc Toan Le, Frank Holsteyns
• Keywords: Diluted HF, Low Dissolved Oxygen, Low-K Material, Metals, Post-Etch Residue Removal (PERR) Clean

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