Post CMP Wet Cleaning Influence on Cu Hillocks

Annamaria Votta; Francesco Pipia; Luisito Livellara; Manuela Caminati; Simona Spadoni; Enrica Ravizza; Salvatore Grasso; Maddalena Bollin; Maurizio Moroni; Mauro Alessandri; Paolo Colpani

doi:10.4028/www.scientific.net/SSP.255.270

Paper Titles

Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch
p.251

The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
p.255

Oxygen Control for Wet Clean Process on Single Wafer Platform
p.260

Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth
p.265

Post CMP Wet Cleaning Influence on Cu Hillocks
p.270

Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond
p.277

Silica Formation during Etching of Silicon Nitride in Phosphoric Acid
p.285

Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process
p.291

Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper
p.299

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Post CMP Wet Cleaning Influence on Cu Hillocks

Post CMP Wet Cleaning Influence on Cu Hillocks

Abstract:

Up to date, it is commonly reported in literature that the amount of copper hillocks is dependent on a) the total amount of residual Cu oxide after Cu CMP, and b) the Cu nitridation. The present work describes how that is only partially true: hillocks depend also on the kind of oxide and on the roughness of the surface after wet treatment. This contribution is even more important than what reported in literature. A tentative model for this behavior is proposed.