Oxygen Control for Wet Clean Process on Single Wafer Platform

Lucile Broussous; Kevin Hoarau; Come de Buttet; Stephane Zoll

doi:10.4028/www.scientific.net/SSP.255.260

Paper Titles

TiN Metal Hardmask Etch Residues Removal with AlN Etch
p.242

High Throughput Wet Etch Solution for BEOL TiN Removal
p.245

Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch
p.251

The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
p.255

Oxygen Control for Wet Clean Process on Single Wafer Platform
p.260

Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth
p.265

Post CMP Wet Cleaning Influence on Cu Hillocks
p.270

Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond
p.277

Silica Formation during Etching of Silicon Nitride in Phosphoric Acid
p.285

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Oxygen Control for Wet Clean Process on Single...

Oxygen Control for Wet Clean Process on Single Wafer Platform

Abstract:

Wet processing with low oxygen content may provides some advantages, however, full control to avoid oxygen uptake during wafer processing remains a challenge for short process industrialization on single wafer tool. Inline oxygen concentration monitoring was used for process optimization. Then, cobalt etch in diluted HF solutions was evaluated depending on the recorded oxygen concentration and hardware available options for atmosphere control in the process chamber.

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XIII

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 255)

Pages:

260-264

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.260

Citation:

Cite this paper

Online since:

September 2016

Authors:

Lucile Broussous*, Kevin Hoarau, Come de Buttet, Stephane Zoll

Keywords:

BEOL Cleaning, Dissolved Oxygen Meter, Low Oxygen Process

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Y. Yagi, T. Imaoka, Y. Kasama, T. Ohmi, IEEE Transactions on Semiconductor Manufacturing 5(2) (1992) pp.121-127.

Google Scholar

[2] T. Yoshida, M. Otsuji, H. Takahashi, Solid State Phenomena 219 (2015) pp.85-88.

Google Scholar

[3] F. Sebai, L. Witters, F. Holsteyns, Y. Yukimi, P. Mertens, S. De Gendt, Solid State Phenomena 219 (2015) pp.105-108.

DOI: 10.4028/www.scientific.net/ssp.219.105

Google Scholar

[4] L. Broussous, O. Hinsinger, S. Favier, P. Besson, Solid State Phenomena 92 (2003) pp.263-266.

DOI: 10.4028/www.scientific.net/ssp.92.263

Google Scholar

[5] D. Rébiscoul, N. Lopez, L. Broussous, D. Louis, G. Passemard, Solid State Phenomena 134 (2008) pp.333-336.

DOI: 10.4028/www.scientific.net/ssp.134.333

Google Scholar

[6] S. Bilouk, C. Pernel, L. Broussous, V. Ivanova, R. P. Nogueira, Solid State Phenomena 145-146 (2009) pp.343-346.

DOI: 10.4028/www.scientific.net/ssp.145-146.343

Google Scholar

[7] B. Peethala, F.W. Mont, S. Molis, R. Knarr, B. L'lherron, C. Labelle, D. Canaperi, S. Siddiqui, Microelectronic Engineering 161 (2016) pp.98-103.

DOI: 10.1016/j.mee.2016.04.005

Google Scholar

[8] L. Broussous, W. Puyrenier, D. Rebiscoul, V. Rouessac, A. Ayral, Solid State Phenomena 145-146 (2009) pp.295-302.

DOI: 10.4028/www.scientific.net/ssp.145-146.295

Google Scholar

[9] M. Hauschildt, B. Hintze, M. Gall, F. Koschinski, A. Preusse, T. Bolom, M. Nopper, A. Beyer, O. Aubel, G. Talut, E. Zschech, Jap.J. of Ap. Physics 53, 05GA11 (2014).

DOI: 10.7567/jjap.53.05ga11

Google Scholar

[10] R. Galand, L. Arnaud, E. Petitprez, G. Brunetti, L. Clément, P. Waltz, Y. Wouters, IEEE transaction, IITC 2011 conference. DOI: 10. 1109/IITC. 2011. 5940320.

Google Scholar