The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions

Ping Hsu; Paul R. Bernatis; Kevin Huang; Chi Yen

doi:10.4028/www.scientific.net/SSP.255.255

Paper Titles

Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal
p.237

TiN Metal Hardmask Etch Residues Removal with AlN Etch
p.242

High Throughput Wet Etch Solution for BEOL TiN Removal
p.245

Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch
p.251

The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
p.255

Oxygen Control for Wet Clean Process on Single Wafer Platform
p.260

Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth
p.265

Post CMP Wet Cleaning Influence on Cu Hillocks
p.270

Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond
p.277

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The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions

Abstract:

Corrosion of cobalt-contained metal line is one of critical defects during post-CMP cleaning process. Thus, the understanding of inhibitors is significant to eliminate corrosion. In this paper, we discuss the learning from etching rate and electrochemical measurement for the solutions using multiple corrosion inhibitors. Furthermore, TEM of cobalt pattern wafer and cleaning results are shown to demonstrate cleaning and cobalt compatibility performance.