High Throughput Wet Etch Solution for BEOL TiN Removal

Chia Jung Hsu; Chieh Ju Wang; Sheng Hung Tu; Makonnen Payne; Emanuel Cooper; Steven Lippy

doi:10.4028/www.scientific.net/SSP.255.245

Paper Titles

Characterization of Etch Residues Generated on Damascene Structures
p.227

Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects
p.232

Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal
p.237

TiN Metal Hardmask Etch Residues Removal with AlN Etch
p.242

High Throughput Wet Etch Solution for BEOL TiN Removal
p.245

Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch
p.251

The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
p.255

Oxygen Control for Wet Clean Process on Single Wafer Platform
p.260

Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth
p.265

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High Throughput Wet Etch Solution for BEOL TiN Removal

Abstract:

Sub-10 nm technology node manufacturing processes may require the use of thicker and denser TiN hard mask for patterning at the BEOL. The modified TiN, which tends to be more chemically robust, must be removed using a wet etch process, while maintaining typical throughput - no extension of typical wet etch process times. To satisfy these needs, a new TiN etching accelerator was found that enhanced the activity of peroxide-related species in a wet etch chemical formulation that achieved increased TiN etch rate relative to formulation without TiN etch rate accelerator (Sample 1), while also minimizing the damage to ultra-low-k inter layer dielectric (ILD) layer by a strong base, also present in the formulation. We report here the result of a solvent based formulation, which adopted the TiN etching accelerator. The formulation was able to maintain TiN etch rate and remove post-etch residue, while remaining selective to ultra-low-k ILD, Co and Cu. The TiN etch rate of the accelerator enhanced formulation can be further tuned by modifying the process temperature or the hydrogen peroxide to formulation mixing ratio and has the potential capability to process > 400 wafers.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

245-250

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.245

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Online since:

September 2016

Authors:

Chia Jung Hsu*, Chieh Ju Wang, Sheng Hung Tu, Makonnen Payne, Emanuel Cooper, Steven Lippy

Keywords:

Low-k Compatibility, Non-TMAH, Residue Clean, TiN Removal, Titanium Nitride, Wet Etch

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