Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment
p.223
p.223
Characterization of Etch Residues Generated on Damascene Structures
p.227
p.227
Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects
p.232
p.232
Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal
p.237
p.237
TiN Metal Hardmask Etch Residues Removal with AlN Etch
p.242
p.242
High Throughput Wet Etch Solution for BEOL TiN Removal
p.245
p.245
Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch
p.251
p.251
The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
p.255
p.255
Oxygen Control for Wet Clean Process on Single Wafer Platform
p.260
p.260
TiN Metal Hardmask Etch Residues Removal with AlN Etch
Abstract:
A wet cleaning formulation with tunable AlN etch rate approach was developed. The formula is compatible with Cu, Co and low-k materials, is able to remove etch residues and does not contain fluoride.
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Periodical:
Solid State Phenomena (Volume 255)
Pages:
242-244
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Online since:
September 2016
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© 2016 Trans Tech Publications Ltd. All Rights Reserved
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