Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment

Akihisa Iwasaki; Ayumi Higuchi; Kana Komori; Masanobu Sato; Els Kesters; Quoc Toan Le; Frank Holsteyns

doi:10.4028/www.scientific.net/SSP.255.223

Paper Titles

Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance
p.195

Developments for Physical Cleaning Sample with High Adhesion Force Particles and Direct Measurement of its Removal Force
p.201

Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool
p.207

Molecular Simulation Contribution to Porous Low-k Pore Size Determination after Damage by Etch and Wet Clean Processes - Invited Paper
p.215

Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment
p.223

Characterization of Etch Residues Generated on Damascene Structures
p.227

Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects
p.232

Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal
p.237

TiN Metal Hardmask Etch Residues Removal with AlN Etch
p.242

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Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment

Abstract:

A rapid repair process of plasma damaged SiCOH in combination with post-etch residue removal has been developed. The carbon depletion layer caused by plasma dry etching was repaired by subsequent surface modifying SAM treatment, which resulted in replenishment of carbon not only on the surface but also a few nm toward the bulk. This repairing technique provides a high-quality hydrophobic surface under conditions of low temperature and short process time. In addition, the SAM layer can be expected to act as an adhesion promotor with metal materials.