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HomeSolid State PhenomenaSolid State Phenomena Vol. 266Structural Properties of Mg2(Si,Ge,Sn)-Based...

Structural Properties of Mg₂(Si,Ge,Sn)-Based Thermoelectric Materials Prepared by Induction Melting Method

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Abstract:

We report on preparation of Mg₂(Si,Ge,Sn)-based thermoelectric materials by a direct induction melting method in Al₂O₃ crucible. A 40 g ingot of Mg₂Si_0.8Sn_0.1Ge₀_.₁ was prepared after addition to the batch 10 wt% of Mg excess. Evolution of crystal structure of the induction melted sample upon annealing and spark plasma sintering (SPS) was tracked by room-temperature X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. An evidence for the formation of Mg₂(Si,Ge,Sn) solid solution was obtained from the crystal lattice parameter of this phase which was found to be larger than that of undoped Mg₂Si. XRD and SEM indicated that alongside with the main phase of the Mg₂(Si,Ge,Sn) solid solution, an impurity phase of Mg₂Sn exists in the sample. Amount of the Mg₂Sn impurity phase is significantly reduced in spark plasma sintered sample.

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Material and Manufacturing Technology VIII

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Periodical:

Solid State Phenomena (Volume 266)

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207-211

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https://doi.org/10.4028/www.scientific.net/SSP.266.207

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Online since:

October 2017

Authors:

Alexandr Shubin*, Dmitriy Karpenkov, Andrey Stepashkin, Dmitriy Arkhipov, Sergey Taskaev, Toshiyuki Takagi, Vladimir Khovaylo

Keywords:

Induction Melting, Mg₂Si, Microstructure, Thermoelectric

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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