Paper Titles

Cu Precipitation in Strained and Relaxing Ge_xSi_1-x Heteroepitaxial Layers
p.339

Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures
p.345

The Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD Device
p.353

Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon
p.359

UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology
p.361

Formation of High Quality SiGe/Si Heterostructures
p.373

Liquid Phase Epitaxy of SiGe Structures
p.385

Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio
p.397

Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers
p.403

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33UHV-VLPCVD Heteroepitaxial Growth of Thin...

UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

361-372

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.361

Citation:

Cite this paper

Online since:

December 1993

Authors:

Matty Caymax, Jef Poortmans, A. Van Ammel

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: