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Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Formation of High Quality SiGe/Si Heterostructures

Formation of High Quality SiGe/Si Heterostructures

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

373-384

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.373

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Online since:

December 1993

Authors:

Y. Shiraki, S. Fukatsu, K. Fujita, T. Usami, D.K. Nayak, H. Sunamura, R. Ito

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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