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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Deposition and P Doping of Si(1-x)Gex Layers in a...

Deposition and P Doping of Si_(1-x)Ge_x Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

409-416

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.409

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Online since:

December 1993

Authors:

Th. Morgenstern, I. Babanskaya, G. Morgenstern, K. Schmalz, P. Gaworzewski, P. Zaumseil, D. Krüger, K. Tittelbach-Helmrich, H. Kühne

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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