Paper Titles

Liquid Phase Epitaxy of SiGe Structures
p.385

Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio
p.397

Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers
p.403

Deposition and P Doping of Si_(1-x)Ge_x Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System
p.409

Misfit Dislocations in Strained Layer Epitaxy
p.417

Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
p.433

Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems
p.445

Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates
p.451

Equilibrium Configuration of Misfit Dislocations in Graded Buffers
p.457

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Misfit Dislocations in Strained Layer Epitaxy

Misfit Dislocations in Strained Layer Epitaxy

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

417-432

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.417

Citation:

Cite this paper

Online since:

December 1993

Authors:

R. Hull, J.C. Bean, R.A. Logan

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: