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Misfit Dislocations in Strained Layer Epitaxy
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Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
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Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems
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Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates
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Equilibrium Configuration of Misfit Dislocations in Graded Buffers
p.457

Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
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Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
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Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
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Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
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HomeSolid State PhenomenaGettering and Defect Engineering in Semiconductor...Equilibrium Configuration of Misfit Dislocations...

Equilibrium Configuration of Misfit Dislocations in Graded Buffers

Abstract:

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Periodical:

Solid State Phenomena (Volumes 32-33)

Main Theme:

Gettering and Defect Engineering in Semiconductor Technology

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

457-462

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.457

Citation:

G. Span et al., "Equilibrium Configuration of Misfit Dislocations in Graded Buffers", Solid State Phenomena, Vols. 32-33, pp. 457-462, 1993

Online since:

December 1993

Authors:

G. Span, G. Heigl, Erich Kasper

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$38.00

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