Paper Titles

Deposition and P Doping of Si_(1-x)Ge_x Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System
p.409

Misfit Dislocations in Strained Layer Epitaxy
p.417

Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
p.433

Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems
p.445

Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates
p.451

Equilibrium Configuration of Misfit Dislocations in Graded Buffers
p.457

Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
p.463

Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
p.469

Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
p.475

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Relaxation Phenomena in Strained Si1-xGex Layers...

Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

451-456

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.451

Citation:

Cite this paper

Online since:

December 1993

Authors:

E. Bugiel, P. Zaumseil, B. Dietrich, H.J. Osten

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: