Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
p.433
p.433
Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems
p.445
p.445
Relaxation Phenomena in Strained Si1-xGex Layers on Planar and Differently Patterned Si Substrates
p.451
p.451
Equilibrium Configuration of Misfit Dislocations in Graded Buffers
p.457
p.457
Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
p.463
p.463
Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices
p.469
p.469
Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures
p.475
p.475
Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
p.481
p.481
Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
p.489
p.489
Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 32-33)
Pages:
463-468
Citation:
Online since:
December 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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