Paper Titles

Equilibrium Configuration of Misfit Dislocations in Graded Buffers
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Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
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Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
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Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
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Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
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Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
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Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments
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Application of Electron Microscopy to Semiconductor Materials Research
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X-Ray Analysis of Strained Layer Configurations
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Strained Quaternary Compounds GaInAsP/InP for...

Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

481-488

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.481

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Online since:

December 1993

Authors:

L. Goldstein, P. Pagnod-Rossiaux, F. Gaborit, P. Garabedian, M. Magnabal, F. Brillouet, M. Matabon

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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