Paper Titles

Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
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Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
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Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
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Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
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Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments
p.495

Application of Electron Microscopy to Semiconductor Materials Research
p.511

X-Ray Analysis of Strained Layer Configurations
p.523

In Situ X-Ray Investigation of Relaxation Processes in Si_1-xGe_x Layers on Silicon Substrate
p.535

Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Photoelectrical Interface Processes in...

Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

495-510

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.495

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Online since:

December 1993

Authors:

M. Gherghel

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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