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Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
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Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
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Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments
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Application of Electron Microscopy to Semiconductor Materials Research
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X-Ray Analysis of Strained Layer Configurations
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In Situ X-Ray Investigation of Relaxation Processes in Si_1-xGe_x Layers on Silicon Substrate
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Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures
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Investigation of Strain in Si_1-xGe_x/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Application of Electron Microscopy to...

Application of Electron Microscopy to Semiconductor Materials Research

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

511-522

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.511

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Online since:

December 1993

Authors:

J. Heydenreich

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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