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Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
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Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
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Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
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Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments
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Application of Electron Microscopy to Semiconductor Materials Research
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Persistent Decrease of Dark Conductivity due to...

Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

489-494

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.489

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Online since:

December 1993

Authors:

H. Pettersson, Hermann G. Grimmeiss, A.L. Powell, C.C. Button, J.S. Roberts, P.I. Rockett

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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