Paper Titles

Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates
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Equilibrium Configuration of Misfit Dislocations in Graded Buffers
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Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
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Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
p.469

Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
p.475

Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
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Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
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Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments
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Application of Electron Microscopy to Semiconductor Materials Research
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Photoluminescence of 2D-Excitons in Ge Layers of...

Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

475-480

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.475

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Online since:

December 1993

Authors:

N.G. Kalugin, L.K. Orlov, O.A. Kuznetsov

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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