Paper Titles

Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems
p.445

Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates
p.451

Equilibrium Configuration of Misfit Dislocations in Graded Buffers
p.457

Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
p.463

Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
p.469

Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
p.475

Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
p.481

Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
p.489

Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments
p.495

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Investigations of 2D Hole Gas in Strained...

Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

469-474

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.469

Citation:

Cite this paper

Online since:

December 1993

Authors:

L.K. Orlov, O.A. Kuznetsov, R.A. Rubtsova, A.L. Chernov, V.I. Vdovin, N.A. Gorodilov, N.G. Kalugin, V.I. Gavrilenko

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: