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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33In Situ X-Ray Investigation of Relaxation...

In Situ X-Ray Investigation of Relaxation Processes in Si_1-xGe_x Layers on Silicon Substrate

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

535-540

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.535

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Online since:

December 1993

Authors:

P. Zaumseil

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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