Paper Titles

Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio
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Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers
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Deposition and P Doping of Si_(1-x)Ge_x Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System
p.409

Misfit Dislocations in Strained Layer Epitaxy
p.417

Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
p.433

Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems
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Relaxation Phenomena in Strained Si_1-xGe_x Layers on Planar and Differently Patterned Si Substrates
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Equilibrium Configuration of Misfit Dislocations in Graded Buffers
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Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Stress Relaxation Mechanisms by Dislocations in...

Stress Relaxation Mechanisms by Dislocations in the System Ge on Si

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

433-444

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.433

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Online since:

December 1993

Authors:

M. Albrecht, S. Christiansen, Horst P. Strunk, P.O. Hansson, E. Bauser

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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