Scanning Tunneling Microscopy Observation of WSe₂ Surface

Abstract:

The surface structure of the WSe₂ were studied using scanning tunneling microscopy. Exfoliation method in an ultra-high-vacuum chamber method is used to obtain a clean surface of WSe₂ samples with atomically smooth terraces and multi-layer steps. Atomic-resolution images revealed two types of atomic defects of surface or near surface. These defects have been identified as the defects in the tungsten atom layer just below the topmost selenium layer.

• Periodical: Solid State Phenomena (Volume 323)
• Pages: 140-145
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.323.140
• Online since: August 2021
• Authors: Gonchigsuren Munkhsaikhan*, Otgonbayar Dugerjav, Odontuya Bayarsaikhan, Buyanjargal Ragchaa, Dagviikhorol Naranchimeg
• Keywords: Impurities, Surface Defects, Tungsten Diselenide

References

[1] Chhowalla M, Shin H S, Eda G, Li L J, Loh K P and Zhang H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nat. Chem. (2013), 5, 263–75.

DOI: 10.1038/nchem.1589

[2] Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V and Geim A K. Two dimensional atomic crystals, Proc. Natl Acad. Sci. USA. (2005), 102, 10451–3.

DOI: 10.1073/pnas.0502848102

[3] Cao X, Tan C, Zhang X, Zhao W and Zhang H. Solution processed two-dimensional metal dichalcogenide-based nanomaterials for energy storage and conversion, Adv.Mater.(2016), 28, 6167–96.

DOI: 10.1002/adma.201504833

[4] Xu K, Yin L, Huang Y, Shifa T A, Chu J, Wang F, Cheng R, Wang Z and He J. Synthesis, properties and applications of 2D layered MIIIXVI (M = Ga, In; X = S, Se, Te) materials, Nanoscale, (2016), 8, 16802–18.

DOI: 10.1039/c6nr05976g

[5] Wang F, Shifa T A, Zhan X, Huang Y, Liu K, Cheng Z, Jiang C and He J. Recent advances in transition-metal dichalcogenide based nanomaterials for water splitting, Nanoscale, (2015), 7, 19764–88.

DOI: 10.1039/c5nr06718a

[6] Deshpande, M. P.; Solanki, G. K.; Agarwal, M. K. Optical Band Gap in Tungsten Diselenide Single Crystals Intercalated by Indium, Mater. Lett. (2000), 43, 66−72.

DOI: 10.1016/s0167-577x(99)00232-3

[7] Anedda, A.; Fortin, E.; Raga, F. Optical Spectra in WSe2, Can. J. Phys}, (1979), 57, 368−374.

DOI: 10.1139/p79-048

[8] Lin, Y.-C. et al. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene, Nano Lett. (bf 2014), 14, 6936−6941.

[9] Addou, R.; Colombo, L.; Wallace, R. M. Surface Defects on Natural MoS2, ACS Appl. Mater. Interfaces, (2015), 7, 11921−11929.

DOI: 10.1021/acsami.5b01778

[10] Mattheiss, L. Band Structures of Transition-Metal-Dichalcogenide Layer Compounds, Phys. Rev. B, (1973), 8, 3719.

DOI: 10.1103/physrevb.8.3719

[11] Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides, Nat. Nanotechnol. (2012), 7, 699–712.

DOI: 10.1038/nnano.2012.193

[12] Brixner, L. H. Preparation and Properties of the Single Crystalline AB2-type Selenides and Tellurides of Niobium, Tantalum, Molybdenum and Tungsten, J. Inorg. Nucl. Chem. (1962), 24, 257.

DOI: 10.1016/0022-1902(62)80178-x

[13] Glemser, O.; Sauer, H.; König, P. The Sulfides and Selenides of Tungsten, Z. Anorg. Chem. (1948), 257, 241−246.

[14] Komsa, H. P.; Kotakoski, J.; Kurasch, S.; Lehtinen, O.; Kaiser, U.; Krasheninnikov, A. V. Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping, Phys. Rev. Lett. (2012), 109, 035503.

DOI: 10.1103/physrevlett.109.035503

[15] Rasool, H. I.; Ophus, C.; Zettl, A. Atomic Defects in Two Dimensional Materials, Adv. Mater. 2015, 27, 5771−5777.

DOI: 10.1002/adma.201500231

[16] Chen, Y.; Huang, S.; Ji, X.; Adepalli, K.; Yin, K.; Ling, X.; Wang, X.; Xue, J.; Dresselhaus, M.; Kong, J.; Yildiz, B. Tuning Electronic Structure of Single Layer MoS2 through Defect and Interface Engineering, ACS Nano, (2018), 12, 2569−2579.

DOI: 10.1021/acsnano.7b08418

[17] Han, Y.; Wu, Z. F.; Xu, S. G.; Chen, X. L.; Wang, L.; Wang, Y.; Xiong, W.; Han, T. Y.; Ye, W. G.; Lin, J. X. Z.; Cai, Y.; Ho, K. M.; He, Y. H.; Su, D. S.; Wang, N. Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures, Adv. Mater. Interfaces, (2015), 2, 1500064.

DOI: 10.1002/admi.201500064

[18] Li, W.-F.; Fang, C.; van Huis, M. A. Strong Spin-orbit Splitting and Magnetism of Point Defect States in Monolayer WS2, Phys. Rev.B: Condens. Matter Mater. Phys. (2016), 94, 195425.

DOI: 10.1103/physrevb.94.195425

[19] Qiu, H.; Xu, T.; Wang, Z. L.; Ren, W.; Nan, H. Y.; Ni, Z. H.; Chen, Q.; Yuan, S. J.; Miao, F.; Song, F. Q.; Long, G.; Shi, Y.; Sun, L.T.; Wang, J. L.; Wang, X. R. Hopping Transport Through Defect induced Localized States in Molybdenum Disulphide, Nat. Commun. (2013), 4, 2642.

DOI: 10.1038/ncomms3642

[20] He, Y.-M.; Clark, G.; Schaibley, R.; He, Y.; Chen, C.; Wei, Y.-J.; Ding, X.; Zhang, Q.; Yao, W.; Xu, X.; Lu, C.-Y.; Pan, J.-W. Single Quantum Emitters in Monolayer Semiconductors, Nat. Nanotechnol. (2015), 10, 497−502.

DOI: 10.1038/nnano.2015.75

[21] Koperski, M.; Nogajewski, K.; Arora, A.; Cherkez, V.; Mallet, P.; Veuillen, J. Y.; Marcus, J.; Kossacki, P.; Potemski, M. Single Photon Emitters in Exfoliated WSe2 structures, Nat. Nanotechnol. (2015), 10, 503−506.

DOI: 10.1038/nnano.2015.67

[22] Antal A. Koós.; Péter Vancsó.; Márton Szendrő.; Gergely Dobrik.; David Antognini Silva.; Zakhar I. Popov.; Pavel B. Sorokin.; Luc Henrard.; Chanyong Hwang.; László P. Biró.; Levente Tapasztó. Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers, The Journal of Physical Chemistry C (2019), 123, 24855-24864.

DOI: 10.1021/acs.jpcc.9b05921

[23] Zhang, Ch.; Wang, C.; Yang, F.; Huang, J. K.; Li, L. J.; Yao, W.; Ji, W.; Shih, Ch. K. Engineering Point-Defect States in Monolayer WSe2, ACS Nano, (2019), 13, 1595−1602.

DOI: 10.1021/acsnano.8b07595

[24] Sommerhalter, Ch.; Matthes, Th. W.; Boneberg, J.; Lux-Steiner, M. Ch.; Leiderer, P. Investigation of Acceptors in p-type WS2 by Standard and Photo-Assisted Scanning Tunneling Microscopy/Spectroscopy, Appl. Surf. Sci. (1999), 144−145, 564−569.

DOI: 10.1016/s0169-4332(98)00866-6

[25] Klein, A.; Dolatzoglou, P.; Lux-Steiner, M.; Bucher, E. Influence of Material Synthesis and Doping on the Transport Properties of WSe2 Single Crystals Grown by Selenium Transport, Sol. Energy Mater. Sol. Cells, (1997), 46, 175−186.

DOI: 10.1016/s0927-0248(96)00093-1

[26] Matthes, Th. W.; Sommerhalter, Ch.; Rettenberger, A.; Bruker, P.; Boneberg, J.; Lux-Steiner, M. C.; Leiderer, P. Imaging of Dopants in Surface and Sub-Surface Layers of the Transition Metal Dichalcogenides WS2 and WSe2 by Scanning Tunneling Microscopy, Appl. Phys. A: Mater. Sci. Process, (1998), 66, 1007−1011.

DOI: 10.1007/pl00022813

[27] Addou, R.; Wallace, R. M. Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability, ACS Appl. Mater. Interfaces, (2016), 8, 26400−26406.

DOI: 10.1021/acsami.6b08847

[28] Gao, D.; Xia, B.; Wang, Y.; Xiao, W.; Xi, P.; Xue, D.; Ding, J. Dual-Native Vacancy Activated Basal Plane and Conductivity of MoSe2 with High-Efficiency Hydrogen Evolution Reaction, Small, (2018), 14, 1704150.

DOI: 10.1002/smll.201704150

[29] Guguchia, Z.; Kerelsky, A.; Edelberg, D.; Banerjee, S.; von Rohr, F.; Scullion, D.; Augustin, M.; Scully, M.; Rhodes, D. A.; Shermadini, Z.; Luetkens, H.; Shengelaya, A.; Baines, C.; Morenzoni, E.; Amato, A.; Hone, J. C.; Khasanov, R.; Billinge, S. J. L.; Santos, E.; Pasupathy, A. N.; Uemura, Y. J. Magnetism in Semiconducting Molybdenum Dichalcogenides, Sci. Adv, (2018), 4, 3672.

DOI: 10.1126/sciadv.aat3672