Wet Cleaning/Etching of NiAl Thin Film

Quoc Toan Le; Esen Gül Arslan; Kevin Fundu; Jean Philippe Soulie; Efrain Altamirano-Sanchez

doi:10.4028/p-zAW7hR

Paper Titles

Slurry Activation for Enhanced Surface Redox Reactions in CMP
p.311

New Quaternary Amines and Solvents for Photoresist Developing and Stripping Applications
p.318

Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes
p.325

Wet Cleaning of Ru Semi-Damascene 18 MP Structures
p.331

A Cleaning Method for Post-Etch Ruthenium Residue Removal Using UV and Liquid Chemical
p.335

Wet Cleaning/Etching of NiAl Thin Film
p.341

Plasma Oxidation of Patterned Mo Nanowires for Precise and Uniform Dry Etching
p.346

Controlled and Uniform Wet Etching of Molybdenum Nanowires
p.351

Selective Removal of Various Resilient Ionic and Halides-Based Surface Contaminants by Wet Cleaning
p.356

HomeSolid State PhenomenaSolid State Phenomena Vol. 346Wet Cleaning/Etching of NiAl Thin Film

Wet Cleaning/Etching of NiAl Thin Film

Abstract:

The effect of various chemical solutions and mixtures on the etch characteristics, roughness change, and surface composition of NiAl, Al, and Ni films were investigated. Both HCl solution (1.82%) and NH₄OH (0.6 and 1.45%) solutions were found to have a detrimental effect on NiAl film in terms of material etching (4-point probe results) and surface roughness change (AFM). Within the concentration range applied, adding H₂O₂ into the HCl or NH₄OH solutions resulted in a significant increase of the etching of the NiAl film. A correlation was observed between the magnitude of etching and increase in surface roughness suggesting that a preferential etching occurred, most likely of grain boundary. Experimental results showed that in the case of 1.82% HCl-H₂O₂ mixture, NiAl surface can be protected up to 240 s of immersion with the use of a corrosion inhibitor such as triazole (TA).

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XVI

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 346)

Pages:

341-345

DOI:

https://doi.org/10.4028/p-zAW7hR

Citation:

Cite this paper

Online since:

August 2023

Authors:

Quoc Toan Le*, Esen Gül Arslan, Kevin Fundu, Jean Philippe Soulie, Efrain Altamirano-Sanchez

Keywords:

Binary Compound Cleaning, Corrosion Inhibitor, NiAl Surface, Pourbaix Diagram, Triazole

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] L.-G. Wen, P. Roussel, O. V. Pedreira, B. Briggs, B. Groven, S. Dutta, M. I. Popovici, N. Heylen, I. Ciofi, K. Vanstreels, F. W. Østerberg, O. Hansen, D. H. Petersen, K. Opsomer, C. Detavernier, C. J. Wilson, S. Van Elshocht, K. Croes, J. Bömmels,† Zs. Tőkei, and C. Adelmann, ACS Appl. Mater. Interfaces, 8, 39 (2016), p.26119–26125;

DOI: 10.1021/acsami.6b07181

Google Scholar

[2] L. Chen, D. Ando, Y. Sutou, D. Gall, and J. Koike, App. Phys. Lett., 113 (2018), 183503;

DOI: 10.1063/1.5049620

Google Scholar

[3] L. Chen, D. Ando, Y. Sutou, and J. Koike, J. Vac. Sci. Tech. B, 37 (2019), 031215;

DOI: 10.1116/1.5094404

Google Scholar

[4] L. Chen et al., J. Appl. Phys., 129 (3) (2021);

DOI: 10.1063/5.0026837

Google Scholar

[5] ] J-Ph. Soulié, Z. Tőkei, J, Swerts, C. Adelmann, 2021 IEEE International Interconnect Technology Conference (IITC), 2021, pp.1-3

DOI: 10.1109/IITC51362.2021.9537441

Google Scholar

[6] Pyun, S.-I., Moon, S.-M., J. Solid State Electrochem. 4 (5) (2000), p.267–272.

Google Scholar