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Paper Titles
Preface
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation
p.1
TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer
p.7
Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems
p.13
Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing
p.21
Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping
p.29
Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide
p.35
Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC
p.41
Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC
p.47

Preface

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Solid State Phenomena (Volume 359)

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August 2024

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