The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC
p.59
p.59
Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing
p.65
p.65
Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC
p.71
p.71
Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
p.79
p.79
Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC
p.85
p.85
Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing
p.91
p.91
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
p.97
p.97
Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget
p.105
p.105
Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization
p.113
p.113
Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC
Abstract:
N atoms were doped into SiNx/4H-SiC substrates by KrF laser irradiation while the substrates were heated. The diffusion depth of nitrogen increased above the solubility limit when the sample heated to 600°C was irradiated by the laser compared to the sample at room temperature. In addition, a clear 4H-SiC pattern was observed in the cross-sectional TEM diffraction image, thereby suggesting that sufficient crystal recovery was achieved even under melt-solidification conditions owing to the effect of substrate heating.
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Periodical:
Solid State Phenomena (Volume 359)
Pages:
85-90
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Online since:
August 2024
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