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HomeSolid State PhenomenaSolid State Phenomena Vol. 359Empirical Model of Low-Ohmic Nickel-Based Contact...

Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget

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Abstract:

In this work, an empirical model of structural and material composition of low-ohmic nickel silicide contact formation on n-type 4H-SiC by laser annealing as well as by RTA is presented. For this purpose, systematic studies with different annealing parameters were performed. The development of the empirical model is based on results from characterization of the nickel silicide by FIB-SEM, TEM, XRD analysis as well as electrical characteristics received from 4-point-measurements.

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20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Formation of Solid-State Structures

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Periodical:

Solid State Phenomena (Volume 359)

Pages:

105-112

DOI:

https://doi.org/10.4028/p-AmY2bK

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Cite this paper

Online since:

August 2024

Authors:

Carsten Hellinger*, Mathias Rommel, Anton J. Bauer

Keywords:

4H-SiC, Empirical Model, Laser Annealing, Nickel, Ohmic Contact

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Creative Commons CC BY 4.0

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