Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
p.97
p.97
Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget
p.105
p.105
Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization
p.113
p.113
Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC
p.119
p.119
Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs
p.125
p.125
Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs
p.131
p.131
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
p.137
p.137
Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
p.145
p.145
Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices
p.151
p.151
Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs
Abstract:
This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 × 1018 ± 4 × 1018 cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.
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Periodical:
Solid State Phenomena (Volume 359)
Pages:
125-129
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Online since:
August 2024
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