Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET

Jui Tse Hsiao; Chia Lung Hung; Yi Kai Hsiao; Bing Yue Tsui

doi:10.4028/p-Sk2y3h

Paper Titles

Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC
p.119

Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs
p.125

Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs
p.131

Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
p.137

Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
p.145

Demonstration of Low Interface Trap Density (~3×10¹¹eV^-1cm^-2) SiC/SiO₂ MOS Capacitor with Excellent Performance Using H₂+NO POA Treatment for SiC Power Devices
p.151

Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface
p.157

Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
p.163

High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B₂O₃ Interlayer between SiC and SiO₂
p.171

HomeSolid State PhenomenaSolid State Phenomena Vol. 359Comparative Study of the Self-Aligned Channel...

Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET

Abstract:

In this study, a novel self-aligned process is proposed to reduce the specific channel resistance, and the electrical characteristics affected by process variation are also verified through TCAD simulation. Also, when compared to other self-aligned processes, the process introduced in this paper offers the advantages of stable electrical characteristics and lower process costs.

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Periodical:

Solid State Phenomena (Volume 359)

Pages:

145-149

DOI:

https://doi.org/10.4028/p-Sk2y3h

Citation:

Cite this paper

Online since:

August 2024

Authors:

Jui Tse Hsiao*, Chia Lung Hung, Yi Kai Hsiao, Bing Yue Tsui

Keywords:

Power MOSFET, Self-Aligned Channel, SiC, Silicon Carbide, VDMOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

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