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Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface
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Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry
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Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal
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Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask
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HomeSolid State PhenomenaSolid State Phenomena Vol. 359Demonstrating SiC In Situ Rounded Trench...

Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications

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Abstract:

Effective control of device geometry is key to mitigating high localized electric fields in next-generation SiC power devices. Advanced trench processing allows for highly tunable trench-gate architectures in trench MOSFETs. By utilizing a two-step inductively coupled plasma reactive ion etch (ICP-RIE) process, a high degree of trench base corner rounding can be achieved, irrespective of trench opening corner geometry prior to post etch treatments. Sentaurus TCAD device modelling highlights the importance of effective electric field dispersion at the gate oxide using rounded trench corners, while I-V characterization of fabricated trench MOS-capacitor devices demonstrate the influence of trench base corner rounding on gate oxide breakdown.

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20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Formation of Solid-State Structures

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Periodical:

Solid State Phenomena (Volume 359)

Pages:

163-170

DOI:

https://doi.org/10.4028/p-uS98lu

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Cite this paper

Online since:

August 2024

Authors:

Ben Jones*, Alex Croot, Jacob Mitchell, Chris Bolton, Jon E. Evans, Finn Monaghan, Kevin Riddell, Mike Jennings, Owen James Guy, Huma Ashraf

Keywords:

Etch Optimization, Gate Trench, ICP, Modelling, MOS-Capacitor, MOSFET, Plasma Etch, Power, RIE, Rounded Corner, Simulation, Trench

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* - Corresponding Author

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