Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface
p.157
p.157
Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
p.163
p.163
High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2
p.171
p.171
Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry
p.181
p.181
Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal
p.187
p.187
Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask
p.193
p.193
A Comparison between Different Post Grinding Processes on 4H-SiC Wafers
p.201
p.201
Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
p.211
p.211
High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C)
p.217
p.217
Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal
Abstract:
The modified SiC slurry for CMP process was proposed in order to obtain high-quality surface of 150 mm SiC wafer and then tried to explain the mechanism of the effect of added transition metal ion to improve polishing characteristics of SiC crystal substrate. SiC substrate with using modified slurry exhibited slightly higher MRR value and lower platen temperature than those with using commercial slurries. The addition of transition metal ion into the slurry enhanced oxidation efficiency of SiC crystal surface and improved MRR and the quality of SiC surface.
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Periodical:
Solid State Phenomena (Volume 359)
Pages:
187-191
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Online since:
August 2024
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