Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs

Hua Mao Chen; Chih Hung Yen; Wei Chun Hung; Wei Chieh Hung; Hung Ming Kuo; Fu Chen Liang; Ting Chang Chang

doi:10.4028/p-RQxJG7

Paper Titles

Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget
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Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization
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Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC
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Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs
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Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs
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Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
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Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
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Demonstration of Low Interface Trap Density (~3×10¹¹eV^-1cm^-2) SiC/SiO₂ MOS Capacitor with Excellent Performance Using H₂+NO POA Treatment for SiC Power Devices
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Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface
p.157

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Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs

Abstract:

This study examines the impact of supercritical fluid treatment on 1200V 4H-SiC vertical double diffusion MOSFETs (VD-MOSFETs). When exposed to pure carbon dioxide or carbon dioxide mixed with nitrous oxide, there is a significant increase in the improvement ratio of drain current, which is contingent upon channel mobility but has no effect on threshold voltage. Conversely, the degradation of drain current caused by ammonia gas treatment is attributed to a reduction in channel mobility. Furthermore, the treatment with pure carbon dioxide or carbon dioxide mixed with nitrous oxide effectively passivates shallow defects, while the presence of hydrogen atoms in ammonia gas leads to an increase in shallow defects.

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Periodical:

Solid State Phenomena (Volume 359)

Pages:

131-135

DOI:

https://doi.org/10.4028/p-RQxJG7

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Online since:

August 2024

Authors:

Hua Mao Chen*, Chih Hung Yen, Wei Chun Hung, Wei Chieh Hung, Hung Ming Kuo, Fu Chen Liang, Ting Chang Chang

Keywords:

DMOS, SiC, Supercritical Fluid Treatment

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Creative Commons CC BY 4.0

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* - Corresponding Author

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