Preface
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
p.1
p.1
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films
p.7
p.7
Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
p.13
p.13
Resistivity as a Witness of Local Crystal Growth Conditions
p.19
p.19
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
p.27
p.27
SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
p.33
p.33
Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
p.41
p.41
4H-SiC Crystal Growth Using Recycled SiC Powder Source
p.47
p.47
Preface
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volume 362)
Online since:
August 2024
Сopyright:
© 2024 Trans Tech Publications Ltd. All Rights Reserved
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