Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method

Hideyuki Uehigashi; Takeshi Okamoto; Akiyoshi Horiai; Hiroaki Fujibayashi; Takahiro Kanda; Takashi Kanemura; Kazuhiro Tsuruta

doi:10.4028/p-NH82Bc

Paper Titles

Polarity Effect on the Heteroepitaxial Growth of B_xC on 4H-SiC by CVD
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Vertical Current Transport in Monolayer MoS₂ Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoO_x Films
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Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
p.13

Resistivity as a Witness of Local Crystal Growth Conditions
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GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
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SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
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Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
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4H-SiC Crystal Growth Using Recycled SiC Powder Source
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HomeSolid State PhenomenaSolid State Phenomena Vol. 362Estimation of Influence on Carbon Vacancy...

Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method

Abstract:

In order to increase productivity and reduce the cost of wafers, we have developed a high temperature chemical vapor deposition (HTCVD) method that can realize the high-speed growth of 4H-SiC crystals. Tokuda et al. reported an interesting study in which the carrier lifetime of a substrate grown by HTCVD (HTCVD substrate) was considerably shorter than that of the substrate grown by physical vapor transport (PVT); moreover, bipolar degradation was highly suppressed when the HTCVD substrate was applied to PiN diodes [1]. Herein, we demonstrate that the short carrier lifetime of the HTCVD substrate is mainly attributable to the carbon vacancy (V_C) and that V_C particularly diffuses from the HTCVD substrate to the epitaxial layer.

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Periodical:

Solid State Phenomena (Volume 362)

Pages:

13-17

DOI:

https://doi.org/10.4028/p-NH82Bc

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Online since:

August 2024

Authors:

Hideyuki Uehigashi*, Takeshi Okamoto, Akiyoshi Horiai, Hiroaki Fujibayashi, Takahiro Kanda, Takashi Kanemura, Kazuhiro Tsuruta

Keywords:

Bipolar Degradation, Carrier Lifetime, HTCVD, Vacancy

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* - Corresponding Author

References

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