Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates

Ruggero Anzalone; Domenica Raciti; Massimo Arena; Cristiano Calabretta; Nicolo Piluso; Andrea Severino

doi:10.4028/p-x3Pi9A

Paper Titles

Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
p.13

Resistivity as a Witness of Local Crystal Growth Conditions
p.19

GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
p.27

SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
p.33

Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
p.41

4H-SiC Crystal Growth Using Recycled SiC Powder Source
p.47

High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
p.53

The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
p.59

Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
p.65

HomeSolid State PhenomenaSolid State Phenomena Vol. 362Development of 200mm SiC Technology - Epitaxial...

Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates

Abstract:

The enlargement of 4H-SiC seed size from 150 mm (6 inch) to 200 mm (8 inch) is currently underway and 8 inches SiC substrate is now facing the market to switch the actual 6-inch technology to 8-inch technology. The aim of this work is to evaluate the influence on the epitaxial layer (using an epi growth campaign made of 21 consecutive runs) using substrates coming from different vendors (3 different suppliers adopted). The same epitaxial process and same reactor were adopted to grow all the samples. After the growth campaign, a difference of thickness uniformity between the three substrate suppliers was observed while no difference of doping uniformity was detected.

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Periodical:

Solid State Phenomena (Volume 362)

Pages:

41-45

DOI:

https://doi.org/10.4028/p-x3Pi9A

Citation:

Cite this paper

Online since:

August 2024

Authors:

Ruggero Anzalone*, Domenica Raciti, Massimo Arena, Cristiano Calabretta, Nicolo Piluso, Andrea Severino

Keywords:

4H-SiC, 8-Inch Substrate, Spreading Resistance Profiling, Wafer Uniformity

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* - Corresponding Author

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