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The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth

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Abstract:

The modified design using an air-pocket existing on inside of crucible has been proposed for the growth of 6-inch SiC single crystal. The actual growth has been performed for conventional, focus ring design and modified hot-zone designs under the same growth conditions and then three SiC crystals were systematically compared in terms of crystal quality. Since stacking faults and polytype inclusions, which could cause dislocation formation, were suppressed by the suitable C/Si ratio control, it was possible to grow SiC ingots with reduced defect density and excellent crystal quality with crucible structures proposed in this study.

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Info:

Periodical:

Solid State Phenomena (Volume 362)

Pages:

59-64

DOI:

https://doi.org/10.4028/p-uOTL9e

Citation:

Cite this paper

Online since:

August 2024

Authors:

Seung Jun Lee, Su Ho Kim, Jung Woo Choi, Jong Hwi Park, Jung Gyu Kim, Kap Ryeol Ku, Ha Lin Lee, Gi Uk Lee, Won Jae Lee*

Keywords:

4H-SiC Growth, Air Pocket, C/Si Ratio, Graphite Structure, PVT

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Creative Commons CC BY 4.0

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* - Corresponding Author

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