4H-SiC Crystal Growth Using Recycled SiC Powder Source
p.47
p.47
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
p.53
p.53
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
p.59
p.59
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
p.65
p.65
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
p.71
p.71
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
p.77
p.77
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
p.83
p.83
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
p.89
p.89
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
p.97
p.97
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
Abstract:
This study substantiates the epigraphene formation theory on SiC, presenting it as freestanding graphene during thermal decomposition epitaxy. It was found that cool down process is responsible for the formation of the graphene buffer layer. Additionally the capping capabilities of the buffer layer have been evaluated using Raman spectroscopy and AFM measurements.
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Periodical:
Solid State Phenomena (Volume 362)
Pages:
71-75
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Online since:
August 2024
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