4H-SiC Crystal Growth Using Recycled SiC Powder Source
p.47
p.47
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
p.53
p.53
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
p.59
p.59
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
p.65
p.65
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
p.71
p.71
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
p.77
p.77
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
p.83
p.83
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
p.89
p.89
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
p.97
p.97
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Abstract:
Recent advances in SiC MOSFET technology allow significant reduction of on-state resistance of the active transistor cell, increasing thus relative contribution of the drift region comprised typically from epitaxial layer or stack thereof. Tight process control of thickness and doping of epitaxial layers is therefore gaining increasing importance. This paper summarizes some key factors and features of four state-of-the-art SiC epitaxial platforms and their impact on achievable epi parameters and wafer throughput.
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Periodical:
Solid State Phenomena (Volume 362)
Pages:
97-103
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Online since:
August 2024
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