4H-SiC Crystal Growth Using Recycled SiC Powder Source
p.47
p.47
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
p.53
p.53
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
p.59
p.59
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
p.65
p.65
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
p.71
p.71
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
p.77
p.77
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
p.83
p.83
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
p.89
p.89
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
p.97
p.97
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
Abstract:
The memory effect of Al doping in 3C-SiC prevents sharp interfaces between layers of different doping levels and can lead to unintentional doping of subsequent epilayers and even growth runs. Introducing HCl into the growth phase of 3C-SiC reduces the Al incorporation but has a significant impact on Al dopant decay rates and background levels within the chamber, resulting in far sharper doping profiles. The impact of relatively high flow rates of HCl is low within a chlorine-based growth system giving fine control over its influence on the growth process and memory effect.
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Periodical:
Solid State Phenomena (Volume 362)
Pages:
77-81
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Online since:
August 2024
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