Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications

Virendra Kotagama; Arne Benjamin Renz; Valeria Kilchytska; Denis Flandre; Yunyi Qi; Vishal Ajit Shah; Marina Antoniou; Peter Michael Gammon

doi:10.4028/p-4px5zX

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HomeSolid State PhenomenaSolid State Phenomena Vol. 362Investigations into the Impact of Deposition or...

Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications

Abstract:

The total ionising dose (TID) reliability of a phosphorous pentoxide (P₂O₅) treated SiO₂ (silicon dioxide) layer is compared for the first time to other industrially relevant oxides formed on 4H-silicon carbide (SiC). Metal-oxide-semiconductor capacitors (MOSCAPs) are characterised before and after irradiation to ascertain changes in flat band voltage shift, leakage current, and dielectric breakdown (BV). Secondary ion mass spectrometry (SIMS) profiling reveals a significant phosphorus concentration near the SiO₂/SiC interface, which led to improved TID resistance. The P₂O₅treated oxide had the lowest leakage current at high voltage bias due to the high-temperature (1,000°C) anneal, though it had a significantly negative flat band voltage due to the high concentration of deposited phosphorus atoms. The thermal and P₂O₅oxides demonstrated a TID resistance, suffering only minor shifts in flat band voltage, while the P₂O₅oxide suffered the smallest decrease in its BV and the smallest leakage current rise, post-irradiation.

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Periodical:

Solid State Phenomena (Volume 362)

Pages:

83-88

DOI:

https://doi.org/10.4028/p-4px5zX

Citation:

Cite this paper

Online since:

August 2024

Authors:

Virendra Kotagama*, Arne Benjamin Renz, Valeria Kilchytska, Denis Flandre, Yunyi Qi, Vishal Ajit Shah, Marina Antoniou, Peter Michael Gammon

Keywords:

4H-SiC, Doped Oxide, MOSCAP, Radiation-Hardness, Reliability, SiO₂, TID

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Creative Commons CC BY 4.0

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* - Corresponding Author

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