Resistivity as a Witness of Local Crystal Growth Conditions

Andrey Soukhojak; Gil Chung

doi:10.4028/p-B7qrkz

Paper Titles

Polarity Effect on the Heteroepitaxial Growth of B_xC on 4H-SiC by CVD
p.1

Vertical Current Transport in Monolayer MoS₂ Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoO_x Films
p.7

Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
p.13

Resistivity as a Witness of Local Crystal Growth Conditions
p.19

GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
p.27

SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
p.33

Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
p.41

4H-SiC Crystal Growth Using Recycled SiC Powder Source
p.47

HomeSolid State PhenomenaSolid State Phenomena Vol. 362Resistivity as a Witness of Local Crystal Growth...

Resistivity as a Witness of Local Crystal Growth Conditions

Abstract:

A detailed knowledge of the growth front geometry during physical vapor transport (PVT) growth of SiC single crystals is beneficial to achieve high quality n+ SiC substrates for power device applications. In this report we show how mapping of resistivity in SiC wafers can shed light on local growth conditions, which are very difficult-to-study in situ. We consider both thermodynamic quantities (absolute temperature T and partial pressure p_N₂) and geometric characteristics of the growth surface relevant to growth kinetic parameters, namely atomic terrace width and atomic step velocity. Specifically, we show how an elevation map of the growth surface can be reconstructed from a spatially-resolved measurement of resistivity in a SiC wafer by integrating the spatial derivative of elevation with respect to the basal plane, which is assumed to be related to local resistivity through dependence of non-equilibrium nitrogen incorporation on the atomic step velocity.

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Periodical:

Solid State Phenomena (Volume 362)

Pages:

19-26

DOI:

https://doi.org/10.4028/p-B7qrkz

Citation:

Cite this paper

Online since:

August 2024

Authors:

Andrey Soukhojak*, Gil Chung

Keywords:

4H, Bulk Crystal Growth, Growth Front Geometry Reconstruction, Physical Vapor Transport, PVT, Resistivity Map, SiC, Silicon Carbide

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Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

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